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PUBLICATION

Year:

2018

volume:

XXIV

number:

3

page:

21

Isayev A.I.

Neutron diffraction study of As40Se60, As40Se30S30, As40Se30Te30 chalcogenide glasses

Isayev A.I.
Neutron diffraction study of As40Se60, As40Se30S30, As40Se30Te30 chalcogenide glasses
Imamaliyev A.R.
Influence of fullerenes on dielectric and conductivity properties of smectic a liquid crystal with negative dielectric anisotropy
Imamaliyev A.R.
Influence of fullerenes С60 on operating characteristics of liquid crystal MBBA
Imamaliyev A.R.
Influence of fullerenes on dielectric and conductivity properties of liquid crystal MBBA
Ibragimova T.Sh.
The silver selenide single crystal growth and devices on its base
Ibragimova T.Sh.
Photoluminescence of (Ga2S3)0.94:(Eu2О3)0,05(Tb2О3)0,01 crystal
Ibragimov T.D., Imamaliyev A.R., Ganizade G.F.
Influence of fullerenes С60 on operating characteristics of liquid crystal MBBA
Ibragimov T.D., Imamaliyev A.R., Ganizade G.F.
Influence of fullerenes on dielectric and conductivity properties of smectic a liquid crystal with negative dielectric anisotropy
Ibragimov T.D., Imamaliyev A.R., Ganizade G.F.
Influence of fullerenes on dielectric and conductivity properties of liquid crystal MBBA
Ibragimov B.G.
Magnetic moment of electrons in diluted magnetic semiconductor quantum ring
Huseynov A.B.
Synthesis and photoluminescent properties of iodinated multi walled carbon nanotubes
Huseynov A.B.
Preparation and study of electrically conductive ceramic nanocomposites based on the Azerbaijan bentonite raw material and multi-walled carbon nanotubes
Hashimova N.N.
Transport properties of solid solution (AgSbTe2)0.8(PbTe)0.2
Hasanov R.F., Musayeva N.N., Babayev S.S.
Role of Sulphur in the A- CVD growth of single wall CNTs
Hasanov R.F.
Growth of MWCNTs on sapphire substrate as an intermediate layer for III-V group structures
Hasanov N.T.
Structure study of Se-As chalcogenide glassy semiconductor system doped by EuF3 impurity
Hasanov E.R., Khalilova Sh.G.
Semiconductors with deep traps in strong electric and magnetic fields
Hajiyev E.Sh.
Superlattice structure of YbAs4S7 nano thick films
Hadjieva G.S., Kazimova F.A., Ibrahimova T.Sh., Tagiev K.O., Asadov E.G.
The silver selenide single crystal growth and devices on its base
Gustova M.V.
The use of nuclear-physical methods for the analysis of wastes from mining and processing industry
Guseynova S.O.
Photoluminescence of (Ga2S3)0.94:(Eu2О3)0,05(Tb2О3)0,01 crystal
Gojayev M.Sh.
The production of the Higgs boson and tt -pair in polarized e-e+-beams
Gojayev M.Sh.
The production of the Higgs boson and -pair in polarized -beams
Gojayev M.Sh.
The production of Higgs boson and heavy fermion pair in electron-positron collisions
Godjaev N.M.
Simulation spatial structure of amyloid beta-peptide (31-35) determined by molecular mechanic method
Gasanov A.G., Bayramov A.A.
Electron structure of graphene based material
Garibova S.N., Isayev A.I., Mekhtiyeva S.I., Atayeva S.U. Babayev S.S., Aliyeva Y.R., Hasanov N.T.
Structure study of Se-As chalcogenide glassy semiconductor system doped by EuF3 impurity
Ganizade G.F.
Influence of fullerenes С60 on operating characteristics of liquid crystal MBBA
Ganizade G.F.
Influence of fullerenes on dielectric and conductivity properties of smectic a liquid crystal with negative dielectric anisotropy
Ganizade G.F.
Influence of fullerenes on dielectric and conductivity properties of liquid crystal MBBA
Ganizade G.F.
Dielectric relaxation in the colloid fullerenes- liquid crystal 5 CB
Tagiyev O.B., Ganbarova Kh.B., Kazimova F.A., Ibragimova T.Sh., Tagiyev K.O., GuseynovaS.O.
Photoluminescence of (Ga2S3)0.94:(Eu2О3)0,05(Tb2О3)0,01 crystal
Gahramanova G.K., Jabbarov R.B.
Morphology and photoluminescence study of InGaN/GaN(In) heterojunctions
Gahramanova G.K.
Investigation of semipolar GaN templates and InGaN multiplies quantum wells grown by HVPE and MOVPE
Gahramanova G.K.
Investigation of low dimensional materials on sapphire substrate for sensor application
Gahramanova G.K.
Growth of MWCNTs on sapphire substrate as an intermediate layer for III-V group structures
Gadzhieva N.N., Magerramov A.M., Akhmedova G.B.
Dielectric properties of polymer composites based on high-density polyethylene and gallium arsenide
Gadjialiev M.M., Pirmagomedov Z.Sh., Efendieva T.N., Saypulaeva L.A.
Method to determine the inverted layer
Gadjialiev M.M., Saipulaeva L.A., Alibekov A.G., Mollaev A.Yu., Zakhvalinsky V.S., Marenkin S.F., Efendieva T.N.
Magnetoresistive properties of Dirac semimetal Cd3As2 ferromagnetic semiconductor at high pressure
Frontasyeva M.V.
The use of nuclear-physical methods for the analysis of wastes from mining and processing industry
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