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PUBLICATION

Year:

2018

volume:

XXIV

number:

1

page:

8

Khalil-zada F.Т.

The production of the Higgs boson on electron-positron linear colliders

Khalil-zada F.Т.
The production of the Higgs boson on electron-positron linear colliders
Khalilova Sh.G.
Semiconductors with deep traps in strong electric and magnetic fields
Khalilova K.G., Abdullayev N.M., Kagramanov K.Sh.
The process of Ostwald maturation on TlGaTe2, crystal surface
Khalilova K.G.
The formation of slip bands in layered crystals
Khalilova K.G.
High-plastic transition in thermoelements on GeTe-Co2Ce eutectic base
Khalilova A.Ə.
Influence of interfacial phases on thermal and electrical conductivity in GaSb-CrSb eutectic system
Kerimova T.G., Mamedova I.A., Kadiroglu Z., Abdullayev N.A., Feldman M.
Temperature dependence of photoluminescence of ZnIn2Se4
Kerimova T.G., Mamedova I.A., Nasibov I.G., Asadullaeva S.G., Kadiroglu Z.
Temperature dependence of photoluminescence of ZnGa2S4
Kerimova E.M.
Influence of temperature, frequency and composition of TlIn1-xErxSe2 solid solutions on their dielectric permittivity and conductivity
Kerimova A.M.
Temperature dependence of electrical characteristics of Ag/n-GaAs Schottky barrier diodes
Kazimova V.K.
Modelling of component axial concentration profiles in InSb-GaSb solid solution single crystals grown by zone melting method using InSb and GaSb seeds
Kazimova V.K.
Modelling of component axial concentration profiles in InSb-GaSb solid solution single crystals grown by zone melting method using InSb and GaSb seeds
Kazimova F.A.
The silver selenide single crystal growth and devices on its base
Kazimova F.A.
Photoluminescence of (Ga2S3)0.94:(Eu2О3)0,05(Tb2О3)0,01 crystal
Kazimov M.V., Arasly D.H., Mammadov I.Kh., Rahimov R.N., Khalilova A.A.
Influence of interfacial phases on thermal and electrical conductivity in GaSb-CrSb eutectic system
Kaplina S.P.
The use of nuclear-physical methods for the analysis of wastes from mining and processing industry
Kamanina I.Z., Kaplina S.P., Gustova M.V., Frontasyeva M.V., Pukhaeva N.E.
The use of nuclear-physical methods for the analysis of wastes from mining and processing industry
Käläntär K.
Mechanism of optical vortex generation from self-assembled TFCD array in smectic LC and TFCD application to optical devices
Kakhramanov K.Sh.
The formation of nano-defect structures in process of double cross slip
Kakhramanov K.Sh.
High-plastic transition in thermoelements on GeTe-Co2Ce eutectic base
Kakhramanov A.Sh.
The formation of slip bands in layered crystals
Kakhramanov A.Sh., Abdullayev N.M., Kakhramanov K.Sh.
The formation of nano-defect structures in process of double cross slip
Kagramanov K.Sh.
The process of Ostwald maturation on TlGaTe2, crystal surface
Kadiroglu Z.
Temperature dependence of photoluminescence of ZnIn2Se
Kadiroglu Z.
Temperature dependence of photoluminescence of ZnGa2S4
Jalilov N.Z.
Spectra of optical parameters of Bi2Te3 film in 1÷6 eV interval
Jalilov N.Z.
Optical parameter spectra of Bi2Te3 (Ni, Cu, Zn) single crystals
Jahangirli Z.A., Tagiyev B.H., Nabiyeva S.A.
Electronic structure of the Ge vacancies in GeSe layered semiconductor
Jabbarov R.B.
Morphology and photoluminescence study of InGaN/GaN(In) heterojunctions
Jabbarov R.B.
Investigation of semipolar GaN templates and InGaN multiplies quantum wells grown by HVPE and MOVPE
Jabbarov R.B.
Investigation of low dimensional materials on sapphire substrate for sensor application
Jabbarov R.B.
Growth of MWCNTs on sapphire substrate as an intermediate layer for III-V group structures
Izmailov A.Ch.
New method of decrease of transit-time broadening of spectral resonances
Izmailov A.Ch.
New electromagnetic methods of slowdown and trapping of particles
Israfilov A.O.
Synthesis and photoluminescent properties of iodinated multi walled carbon nanotubes
Israfilov A.O.
Preparation and study of electrically conductive ceramic nanocomposites based on the Azerbaijan bentonite raw material and multi-walled carbon nanotubes
Ismailov T.H.
Structural peculiarities and dielectric properties of high-density polyethylene films containing InP and Ge particles
Islamzade E.M., Agamaliyev Z.A., Ajdarov G.H.
Electron mobility in Ge1-xSix (0≤x≤0.13) crystals complex doped by <Ga,Sb,Ni> impurities
Isayev A.I.
The structure and physical parameters of chalcogenide glass-like semiconductors of system As - Ge - Se
Isayev A.I.
Structure study of Se-As chalcogenide glassy semiconductor system doped by EuF3 impurity
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