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PUBLICATION

Year:

2018

volume:

XXIV

number:

1

page:

8

Khalil-zada F.Т.

The production of the Higgs boson on electron-positron linear colliders

Azizov S.T., Aliyev O.A.
The analysis of dielectric absorption dispersion of glycine water solution
Mekhtiyeva S.I., Isayev A.I., Alekberov R.I., Mamedova H.I.
The structure and physical parameters of chalcogenide glass-like semiconductors of system As - Ge - Se
Zakhvalinsky V.S.
Magnetoresistive properties of Dirac semimetal Cd3As2 ferromagnetic semiconductor at high pressure
Zakhrabekova Z.M., Alekperov A.I., Kazimova V.K., Ajdarov G.H.
Modelling of component axial concentration profiles in InSb-GaSb solid solution single crystals grown by zone melting method using InSb and GaSb seeds
Zakhrabekova Z.M., Alekperov A.I., Kazimova V.K., Ajdarov G.H.
Modelling of component axial concentration profiles in InSb-GaSb solid solution single crystals grown by zone melting method using InSb and GaSb seeds
Yusibova I.F.
Optical and UV-VIS luminescence spectra of Ni1-xZnxFe2O4 ferrite nanopowders
Veliyeva L.I., Aliyev E.Z.
Study of space structure of Dippu-AST5 molecule
Tatardar F.N., Kurbanov M.A., Safarov N.A., Amirov Sh.Sh., Aliyev O.A.
Plasma methods for nanostructuring the polymer matrix of piezoelectric nanocomposites
Tairov B.A.
Analysis of fluctuation conductivity in Y0,7Cd0,3Ba2Cu3O7-δ
Tagiyeva Sh.
Review of interaction constant of vector meson-nucleon in the framework of AdS/QCD hard wall model
Tagiyev Z.H.
Spectral density of the ultra short laser pulses at parametric interaction in metamaterials
Tagiyev O.B., Ganbarova Kh.B., Kazimova F.A., Ibragimova T.Sh., Tagiyev K.O., Guseynova S.O.
Photoluminescence of (Ga2S3)0.94:(Eu2О3)0,05(Tb2О3)0,01 crystal
Tagiyev K.O.
Photoluminescence of (Ga2S3)0.94:(Eu2О3)0,05(Tb2О3)0,01 crystal
Tagiyev B.H.
Electronic structure of the Ge vacancies in GeSe layered semiconductor
Tagiev K.O.
The silver selenide single crystal growth and devices on its base
Sultanova X.B.
Dependence of electron mobility on their surface density in a semiconductor quantum well with the modified Poschl -Teller confining potential
Soltanova G.A.
The production of the Higgs boson and tt-pair in polarized e-e+-beams
Shvetsov V.N.
IBR-2 - pulsed source for neutron scattering research at JINR
Selim-zade R.I.
The fluctuation conductivity in Bi1,7Pb0,3Sr2Ca2Cu3Oy
Selim-zade R.I.
Analysis of fluctuation conductivity in Y0,7Cd0,3Ba2Cu3O7-δ
Saypulaeva L.A.
Method to determine the inverted layer
Saipulaeva l.A.
Magnetoresistive properties of Dirac semimetal Cd3As2 ferromagnetic semiconductor at high pressure
Safarov N. A.
Plasma methods for nanostructuring the polymer matrix of piezoelectric nanocomposites
Sadigova A.A.
Photoluminescence properties of Ni1-xZnxFe2O4 nanopowders
Sadigova A.A., Aliyeva Sh.N., AhmadovaSh.A., Yusibova I.F., Mehdiyev T.R., Naghıyev T.G.
Optical and UV-VIS luminescence spectra of Ni1-xZnxFe2O4 ferrite nanopowders
Sadigova A.A.
Kramers-Kronig analysis of Ni1-xZnxFe2O4 ferrites infrared diffuse reflectance spectra
Rzayeva S.M. , Rashidova Sh.Sh., Ismailov T.H.
Structural peculiarities and dielectric properties of high-density polyethylene films containing InP and Ge particles
Rashidova Sh.Sh.
Structural peculiarities and dielectric properties of high-density polyethylene films containing InP and Ge particles
Rajabov B.A.
De Sitter cosmological model and the problem of dark matter and energy
Rahimov R.N.
Influence of interfacial phases on thermal and electrical conductivity in GaSb-CrSb eutectic system
Rahimli A.B., Amiraslanov I.R.
Refinement the crystal structure of the Ga1-xIn1+xS3
Ragimov S.S., Musayev M.A., Hashimova N.N.
Transport properties of solid solution (AgSbTe2)0.8(PbTe)0.2
Ragimov S.S., Agayeva G.I.
The structural analysis and thermal power of Bi2Sr2CaCu2Ox and Bi2Sr2Ca0.6Zn0.4Cu2Ox
Ragimov S.S., Agayeva G.I.
Pinning energy of Bi2Sr2CaCu2OX and Bi2Sr2Ca0.8Zn0.2Cu2OX
Ragimov J.A.
Analysis of fluctuation conductivity in Y0,7Cd0,3Ba2Cu3O7-δ
Pukhaeva N.E.
The use of nuclear-physical methods for the analysis of wastes from mining and processing industry
Pirmagomedov Z.Sh.
Method to determine the inverted layer
Pashayev B.G.
Structural features in systems water- polyethylene-glycol -KCl, KBr, KI
Pashaev A.M., Kerimova E.M., Mustafaeva S.N.
Influence of temperature, frequency and composition of TlIn1-xErxSe2 solid solutions on their dielectric permittivity and conductivity
Orucov T.
Investigation of low dimensional materials on sapphire substrate for sensor application
Orucov T.
Growth of MWCNTs on sapphire substrate as an intermediate layer for III-V group structures
Omarova E.Sh.
Decays of supersymmetric Higgs bosons into fermions
Nurubeyli T.K., Nuriyev K.Z.
Ion-optical calculation of time-of-flight mass-spectrometer
Nuriyeva A.B.
Structural features of manganese containing topological insulators the basis of Bi2Te3
Nuriyev K.Z.
Ion-optical calculation of time-of-flight mass-spectrometer
Nasibova N.A.
The production of the Higgs boson and tt-pair in polarized e-e+ -beams
Nasibov I.G.
Temperature dependence of photoluminescence of ZnGa2S4
Nasibov I.A.
Temperature dependence of electrical characteristics of Ag/n-GaAs Schottky barrier diodes
Najafova G.Z.
Simulation spatial structure of amyloid beta-peptide (31-35) determined by molecular mechanic method
Naghiyev T.G.
Optical and UV-VIS luminescence spectra of Ni1-xZnxFe2O4 ferrite nanopowders
Naghiyev T.G.
Photoluminescence properties of Ni1-x Znx Fe2 O4 nanopowders
Nabiyeva S.A.
Electronic structure of the Ge vacancies in GeSe layered semiconductor
Mustafaeva S.N.
Response of silver chalcogallates to X-rays
Mustafaeva S.N.
Influence of temperature, frequency and composition of TlIn1-xErxSe2 solid solutions on their dielectric permittivity and conductivity
Musayeva N.N.
Role of Sulphur in the A- CVD growth of single wall CNTs
Musayeva N.N.
Investigation of low dimensional materials on sapphire substrate for sensor application
Musayeva N.N.
Growth of MWCNTs on sapphire substrate as an intermediate layer for III-V group structures
Musayev M.A.
Transport properties of solid solution (AgSbTe2)0.8(PbTe)0.2
Mollaev A.Yu.
Magnetoresistive properties of Dirac semimetal Cd3As2 ferromagnetic semiconductor at high pressure
Mekhtiyeva S.I., Isayev A.I., Alekberov R.I., Mamedova H.I.
The structure and physical parameters of chalcogenide glass-like semiconductors of system As - Ge - Se
Mekhtiyeva S.I.
Structure study of Se-As chalcogenide glassy semiconductor system doped by EuF3 impurity
Mekhtiyeva S.I.
Neutron diffraction study of As40Se60, As40Se30S30, As40Se30Te30 chalcogenide glasses
Mekhdiyeva I.F.
Thermodynamic properties of erbium monotelluride
Mehdiyev T.R.
Photoluminescence properties of Ni1-xZnxFe2O4 nanopowders
Mehdiyev T.R.
Kramers-Kronig analysis of Ni1-xZnxFe2O4 ferrites infrared diffuse reflectance spectra
Mehdiyev T.R.
Optical and UV-VIS luminescence spectra of Ni1-xZnxFe2O4 ferrite nanopowders
Marenkin S.F.
Magnetoresistive properties of Dirac semimetal Cd3As2 ferromagnetic semiconductor at high pressure
Mammadova S.O.
Majorana fermions in one- and quasi-one dimensional insulator with charge-density wave
Mammadova S.A.
Synthesis and photoluminescent properties of iodinated multi walled carbon nanotubes
Mammadova S.A.
Preparation and study of electrically conductive ceramic nanocomposites based on the Azerbaijan bentonite raw material and multi-walled carbon nanotubes
Mammadov Sh., Tagiyeva Sh.
Review of interaction constant of vector meson-nucleon in the framework of AdS/QCD hard wall model
Mammadov I.Kh.
Influence of interfacial phases on thermal and electrical conductivity in GaSb-CrSb eutectic system
Mamedova I.A.
Temperature dependence of photoluminescence of ZnIn2Se
Mamedova I.A.
Temperature dependence of photoluminescence of ZnGa2S4
Mamedova H.I.
The structure and physical parameters of chalcogenide glass-like semiconductors of system As - Ge - Se
Magerramov A.A.
Dielectric properties of polymer composites based on high-density polyethylene and gallium arsenide
Magerramov A.A., Kakhramanov K.Sh., Khalilova K.G.
High-plastic transition in thermoelements on GeTe-Co2Ce eutectic base
Lukichev V.F.
Response of silver chalcogallates to X-rays
Kurbanov M.A.
Plasma methods for nanostructuring the polymer matrix of piezoelectric nanocomposites
Khalil-zada F.Т.
The production of Higgs boson on polarized colliding linear e+e- colliders and supersymmetry
Khalil-zada F.Т.
The production of the Higgs boson on electron-positron linear colliders
Khalilova Sh.G.
Semiconductors with deep traps in strong electric and magnetic fields
Khalilova K.G., Abdullayev N.M., Kagramanov K.Sh.
The process of Ostwald maturation on TlGaTe2, crystal surface
Khalilova K.G.
The formation of slip bands in layered crystals
Khalilova K.G.
High-plastic transition in thermoelements on GeTe-Co2Ce eutectic base
Khalilova A.Ə.
Influence of interfacial phases on thermal and electrical conductivity in GaSb-CrSb eutectic system
Kerimova T.G., Mamedova I.A., Kadiroglu Z., Abdullayev N.A., Feldman M.
Temperature dependence of photoluminescence of ZnIn2Se4
Kerimova T.G., Mamedova I.A., Nasibov I.G., Asadullaeva S.G., Kadiroglu Z.
Temperature dependence of photoluminescence of ZnGa2S4
Kerimova E.M.
Influence of temperature, frequency and composition of TlIn1-xErxSe2 solid solutions on their dielectric permittivity and conductivity
Kerimova A.M.
Temperature dependence of electrical characteristics of Ag/n-GaAs Schottky barrier diodes
Kazimova V.K.
Modelling of component axial concentration profiles in InSb-GaSb solid solution single crystals grown by zone melting method using InSb and GaSb seeds
Kazimova V.K.
Modelling of component axial concentration profiles in InSb-GaSb solid solution single crystals grown by zone melting method using InSb and GaSb seeds
Kazimova F.A.
The silver selenide single crystal growth and devices on its base
Kazimova F.A.
Photoluminescence of (Ga2S3)0.94:(Eu2О3)0,05(Tb2О3)0,01 crystal
Kazimov M.V., Arasly D.H., Mammadov I.Kh., Rahimov R.N., Khalilova A.A.
Influence of interfacial phases on thermal and electrical conductivity in GaSb-CrSb eutectic system
Kaplina S.P.
The use of nuclear-physical methods for the analysis of wastes from mining and processing industry
Kamanina I.Z., Kaplina S.P., Gustova M.V., Frontasyeva M.V., Pukhaeva N.E.
The use of nuclear-physical methods for the analysis of wastes from mining and processing industry
Käläntär K.
Mechanism of optical vortex generation from self-assembled TFCD array in smectic LC and TFCD application to optical devices
Kakhramanov K.Sh.
The formation of nano-defect structures in process of double cross slip
Kakhramanov K.Sh.
High-plastic transition in thermoelements on GeTe-Co2Ce eutectic base
Kakhramanov A.Sh.
The formation of slip bands in layered crystals
Kakhramanov A.Sh., Abdullayev N.M., Kakhramanov K.Sh.
The formation of nano-defect structures in process of double cross slip
Kagramanov K.Sh.
The process of Ostwald maturation on TlGaTe2, crystal surface
Kadiroglu Z.
Temperature dependence of photoluminescence of ZnIn2Se
Kadiroglu Z.
Temperature dependence of photoluminescence of ZnGa2S4
Jalilov N.Z.
Spectra of optical parameters of Bi2Te3 film in 1÷6 eV interval
Jalilov N.Z.
Optical parameter spectra of Bi2Te3 (Ni, Cu, Zn) single crystals
Jahangirli Z.A., Tagiyev B.H., Nabiyeva S.A.
Electronic structure of the Ge vacancies in GeSe layered semiconductor
Jabbarov R.B.
Morphology and photoluminescence study of InGaN/GaN(In) heterojunctions
Jabbarov R.B.
Investigation of semipolar GaN templates and InGaN multiplies quantum wells grown by HVPE and MOVPE
Jabbarov R.B.
Investigation of low dimensional materials on sapphire substrate for sensor application
Jabbarov R.B.
Growth of MWCNTs on sapphire substrate as an intermediate layer for III-V group structures
Izmailov A.Ch.
New method of decrease of transit-time broadening of spectral resonances
Izmailov A.Ch.
New electromagnetic methods of slowdown and trapping of particles
Israfilov A.O.
Synthesis and photoluminescent properties of iodinated multi walled carbon nanotubes
Israfilov A.O.
Preparation and study of electrically conductive ceramic nanocomposites based on the Azerbaijan bentonite raw material and multi-walled carbon nanotubes
Ismailov T.H.
Structural peculiarities and dielectric properties of high-density polyethylene films containing InP and Ge particles
Islamzade E.M., Agamaliyev Z.A., Ajdarov G.H.
Electron mobility in Ge1-xSix (0≤x≤0.13) crystals complex doped by <Ga,Sb,Ni> impurities
Isayev A.I.
The structure and physical parameters of chalcogenide glass-like semiconductors of system As - Ge - Se
Isayev A.I.
Structure study of Se-As chalcogenide glassy semiconductor system doped by EuF3 impurity
Isayev A.I.
Neutron diffraction study of As40Se60, As40Se30S30, As40Se30Te30 chalcogenide glasses
Imamaliyev A.R.
Influence of fullerenes on dielectric and conductivity properties of smectic a liquid crystal with negative dielectric anisotropy
Imamaliyev A.R.
Influence of fullerenes С60 on operating characteristics of liquid crystal MBBA
Imamaliyev A.R.
Influence of fullerenes on dielectric and conductivity properties of liquid crystal MBBA
Ibragimova T.Sh.
The silver selenide single crystal growth and devices on its base
Ibragimova T.Sh.
Photoluminescence of (Ga2S3)0.94:(Eu2О3)0,05(Tb2О3)0,01 crystal
Ibragimov T.D., Imamaliyev A.R., Ganizade G.F.
Influence of fullerenes С60 on operating characteristics of liquid crystal MBBA
Ibragimov T.D., Imamaliyev A.R., Ganizade G.F.
Influence of fullerenes on dielectric and conductivity properties of smectic a liquid crystal with negative dielectric anisotropy
Ibragimov T.D., Imamaliyev A.R., Ganizade G.F.
Influence of fullerenes on dielectric and conductivity properties of liquid crystal MBBA
Ibragimov B.G.
Magnetic moment of electrons in diluted magnetic semiconductor quantum ring
Huseynov A.B.
Synthesis and photoluminescent properties of iodinated multi walled carbon nanotubes
Huseynov A.B.
Preparation and study of electrically conductive ceramic nanocomposites based on the Azerbaijan bentonite raw material and multi-walled carbon nanotubes
Hashimova N.N.
Transport properties of solid solution (AgSbTe2)0.8(PbTe)0.2
Hasanov R.F., Musayeva N.N., Babayev S.S.
Role of Sulphur in the A- CVD growth of single wall CNTs
Hasanov R.F.
Growth of MWCNTs on sapphire substrate as an intermediate layer for III-V group structures
Hasanov N.T.
Structure study of Se-As chalcogenide glassy semiconductor system doped by EuF3 impurity
Hasanov E.R., Khalilova Sh.G.
Semiconductors with deep traps in strong electric and magnetic fields
Hajiyev E.Sh.
Superlattice structure of YbAs4S7 nano thick films
Hadjieva G.S., Kazimova F.A., Ibrahimova T.Sh., Tagiev K.O., Asadov E.G.
The silver selenide single crystal growth and devices on its base
Gustova M.V.
The use of nuclear-physical methods for the analysis of wastes from mining and processing industry
Guseynova S.O.
Photoluminescence of (Ga2S3)0.94:(Eu2О3)0,05(Tb2О3)0,01 crystal
Gojayev M.Sh.
The production of the Higgs boson and tt -pair in polarized e-e+-beams
Gojayev M.Sh.
The production of the Higgs boson and -pair in polarized -beams
Gojayev M.Sh.
The production of Higgs boson and heavy fermion pair in electron-positron collisions
Godjaev N.M.
Simulation spatial structure of amyloid beta-peptide (31-35) determined by molecular mechanic method
Gasanov A.G., Bayramov A.A.
Electron structure of graphene based material
Garibova S.N., Isayev A.I., Mekhtiyeva S.I., Atayeva S.U. Babayev S.S., Aliyeva Y.R., Hasanov N.T.
Structure study of Se-As chalcogenide glassy semiconductor system doped by EuF3 impurity
Ganizade G.F.
Influence of fullerenes С60 on operating characteristics of liquid crystal MBBA
Ganizade G.F.
Influence of fullerenes on dielectric and conductivity properties of smectic a liquid crystal with negative dielectric anisotropy
Ganizade G.F.
Influence of fullerenes on dielectric and conductivity properties of liquid crystal MBBA
Ganizade G.F.
Dielectric relaxation in the colloid fullerenes- liquid crystal 5 CB
Tagiyev O.B., Ganbarova Kh.B., Kazimova F.A., Ibragimova T.Sh., Tagiyev K.O., GuseynovaS.O.
Photoluminescence of (Ga2S3)0.94:(Eu2О3)0,05(Tb2О3)0,01 crystal
Gahramanova G.K., Jabbarov R.B.
Morphology and photoluminescence study of InGaN/GaN(In) heterojunctions
Gahramanova G.K.
Investigation of semipolar GaN templates and InGaN multiplies quantum wells grown by HVPE and MOVPE
Gahramanova G.K.
Investigation of low dimensional materials on sapphire substrate for sensor application
Gahramanova G.K.
Growth of MWCNTs on sapphire substrate as an intermediate layer for III-V group structures
Gadzhieva N.N., Magerramov A.M., Akhmedova G.B.
Dielectric properties of polymer composites based on high-density polyethylene and gallium arsenide
Gadjialiev M.M., Pirmagomedov Z.Sh., Efendieva T.N., Saypulaeva L.A.
Method to determine the inverted layer
Gadjialiev M.M., Saipulaeva L.A., Alibekov A.G., Mollaev A.Yu., Zakhvalinsky V.S., Marenkin S.F., Efendieva T.N.
Magnetoresistive properties of Dirac semimetal Cd3As2 ferromagnetic semiconductor at high pressure
Frontasyeva M.V.
The use of nuclear-physical methods for the analysis of wastes from mining and processing industry
Frigeri Cesare
Investigation of semipolar GaN templates and InGaN multiplies quantum wells grown by HVPE and MOVPE
Feldman M.
Temperature dependence of photoluminescence of ZnIn2Se
Fábián M.
Neutron diffraction study of As40Se60, As40Se30S30, As40Se30Te30 chalcogenide glasses
Eminova V.I.
The fluctuation conductivity in Bi1,7Pb0,3Sr2Ca2Cu3Oy
Efendieva T.N.
Method to determine the inverted layer
Efendieva T.N.
Magnetoresistive properties of Dirac semimetal Cd3As2 ferromagnetic semiconductor at high pressure
Damirova S.Z.
The fluctuation conductivity in Bi1,7Pb0,3Sr2Ca2Cu3Oy
Dadashov Z.A.
Boundary effects in polymer composites - powered ceramics
Bayramov A.A.
Electron structure of graphene based material
Babayev S.S.
The structural features of crystalline phases of the GaSe-InSe system
Babayev S.S.
Structure study of Se-As chalcogenide glassy semiconductor system doped by EuF3 impurity
Babayev S.S.
Role of sulphur in the A- CVD growth of single wall CNTs
Babayev M.M., Sultanova X.B., Abbasli M.Q.
Dependence of electron mobility on their surface density in a semiconductor quantum well with the modified Poschl -teller confining potential
Babanli A.M., Ibragimov B.G.
Magnetic moment of electrons in diluted magnetic semiconductor quantum ring
Azizova K.K.
The structural features of crystalline phases of the GaSe-InSe system
Azizov S.T., Aliyev O.A., Abaszade R.G.
The low-frequency dielectric properties of benzene-bromobenzene system
Azizov S.T., Aliyev O.A.
The analysis of dielectric absorption dispersion of glycine water solution
Azimova S.R.
The formation of slip bands in layered crystals
Atayeva S.U.
Structure study of Se-As chalcogenide glassy semiconductor system doped by EuF3 impurity
Asimov A.A., Kerimova A.M., Ahmedova Kh.N., Nasibov I.A.
Temperature dependence of electrical characteristics of Ag/n-GaAs Schottky barrier diodes
Asgerova P.A.
Structural features of manganese containing topological insulators the basis of Bi2Te3
Asadullaeva S.G.
Temperature dependence of photoluminescence of ZnGa2S4
Asadov S.M., Mustafaeva S.N., Lukichev V.F.
Response of silver chalcogallates to X-rays
Asadov E.G.
The silver selenide single crystal growth and devices on its base
Arasly D.H.
Influence of ınterfacıal phases on thermal and electrıcal conductıvıty ın GaSb-CrSb eutectic system
Amirov Sh.Sh., Tagiyev Z.H., Ahmadov G.N.
Spectral density of the ultra short laser pulses at parametric interaction in metamaterials
Amirov Sh.Sh.
Plasma methods for nanostructuring the polymer matrix of piezoelectric nanocomposites
Amiraslanov I.R., Azizova K.K., Babayev S.S., Aliyeva Y.R.
The structural features of crystalline phases of the GaSe-InSe system
Amiraslanov I.R., Aliyev Z.S., Asgerova P.A., Nuriyeva A.B.
Structural features of manganese containing topological insulators the basis of Bi2Te3
Amiraslanov I.R.
Refinement the crystal structure of the Ga1-xIn1+xS3
Alverdiyev I.J.
Thermodynamic study of Cu2SnSe3 by emf method with solid electrolyte Cu4RbCl3I2
Aliyeva Y.R.
The structural features of crystalline phases of the GaSe-InSe system
Aliyeva Y.R.
Structure study of Se-As chalcogenide glassy semiconductor system doped by EuF3 impurity
Aliyeva Y.N.
SmS thin films with nanosize surface architecture
Aliyeva Y.N.
Scanning probe microscopy studies of fullerene C60/porous silicon multilayer structures
Aliyeva Sh.N.
Optical and UV-VIS luminescence spectra of Ni1-xZnxFe2O4 ferrite nanopowders
Aliyeva Sh.N.
Photoluminescence properties of Ni1-x Znx Fe2 O4 nanopowders
Aliyeva Sh.N.
Kramers-Kronig analysis of Ni1-xZnxFe2O4 ferrites infrared diffuse reflectance spectra
Aliyev Z.S.
Structural features of manganese containing topological insulators the basis of Bi2Te3
Aliyev V.M., Selim-zade R.I., Eminova V.I., Damirova S.Z.
The fluctuation conductivity in Bi1,7Pb0,3Sr2Ca2Cu3Oy
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